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- Jin-Ki Kim, Koji Sakui, Sung-Soo Lee, Yasuo Itoh, Suk-Chon Kwon, Kazuhisa Kanazawa, Ki-Jun Lee, Hiroshi Nakamura, Kang-Young Kim, Toshihiko Himeno, Jang-Rae Kim, Kazushige Kanda, Tae-Sung Jung, Yoichi Oshima, Kang-Deog Suh, Kazuhiko Hashimoto, Sung-Tae Ahn, Junichi Miyamoto:
A 120-mm2 64-Mb NAND flash memory achieving 180 ns/Byte effective program speed. IEEE J. Solid State Circuits 32(5): 670-680 (1997)
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