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"P-P-N Based 10T SRAM Cell for Low-Leakage and Resilient Subthreshold ..."

Cheng-Hung Lo, Shi-Yu Huang (2011)

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DOI: 10.1109/JSSC.2010.2102571

access: closed

type: Journal Article

metadata version: 2020-08-30

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Cheng-Hung Lo, Shi-Yu Huang:
P-P-N Based 10T SRAM Cell for Low-Leakage and Resilient Subthreshold Operation. IEEE J. Solid State Circuits 46(3): 695-704 (2011)

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