"A 512-mb DDR3 SDRAM prototype with CIO minimization and ..."

Churoo Park et al. (2006)

> Home

Details and statistics

DOI: 10.1109/JSSC.2006.870808

access: closed

type: Journal Article

metadata version: 2025-10-14

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/jssc/ParkCLKLCJCSPSC06
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/jssc/ParkCLKLCJCSPSC06
Churoo Park, Hoeju Chung, Yun-Sang Lee, Jaekwan Kim, JaeJun Lee, Moo Sung Chae, Dae-Hee Jung, Sung-Ho Choi, Seung-young Seo, Taek-Seon Park, Jun-Ho Shin, Jin-Hyung Cho, Seunghoon Lee, Ki-Whan Song, Kyu-Hyoun Kim, Jung-Bae Lee, Changhyun Kim, Soo-In Cho:
A 512-mb DDR3 SDRAM prototype with C_IO minimization and self-calibration techniques. IEEE J. Solid State Circuits 41(4): 831-838 (2006)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.