"Analysis of 4H-SiC semi-superjunction structures for low switching losses ..."

Mingyang Chen et al. (2025)

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DOI: 10.1016/J.MEJO.2025.106853

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type: Journal Article

metadata version: 2025-09-21

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Mingyang Chen, Quanyuan Feng, Quanyi Zhang, Xiaopei Chen, Yuanchang Zhan:
Analysis of 4H-SiC semi-superjunction structures for low switching losses and fast reverse recovery trench MOS with narrow trench gates and integrated MPS diodes. Microelectron. J. 165: 106853 (2025)

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