"Simulation methodology for dose effects in lateral DMOS transistors."

Pablo Fernández-Martínez et al. (2012)

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DOI: 10.1016/J.MEJO.2011.10.013

access: closed

type: Journal Article

metadata version: 2024-10-06

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Pablo Fernández-Martínez, Francisco Rogelio Palomo, S. Díez, Salvador Hidalgo, Miguel Ullán, David Flores, Roland Sorge:
Simulation methodology for dose effects in lateral DMOS transistors. Microelectron. J. 43(1): 50-56 (2012)

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