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"Charge buildup effects in asymmetric p-type resonant tunneling diodes."

Yara Galvão Gobato et al. (2005)

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DOI: 10.1016/J.MEJO.2005.02.055

access: closed

type: Journal Article

metadata version: 2023-11-03

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Yara Galvão Gobato, Maria José Santos Pompeu Brasil, Ihosvany Camps, Hugo Bonette de Carvalho, Lara F. dos Santos, Gilmar Eugênio Marques, Mohamed Henini, Laurence Eaves, G. Hill:
Charge buildup effects in asymmetric p-type resonant tunneling diodes. Microelectron. J. 36(3-6): 356-358 (2005)

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