"Comprehensive analysis of gate voltage and temperature stresses induced ..."

Tao Liu et al. (2025)

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DOI: 10.1016/J.MEJO.2025.106807

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type: Journal Article

metadata version: 2025-08-19

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Tao Liu, Hui Li, Rongyao Ma, Zhiyu Wang, Qian Liu, Hao Wu, Jian Shen, Juan Luo, Hao Zhong, Shengdong Hu:
Comprehensive analysis of gate voltage and temperature stresses induced threshold voltage instability for 1200V DT SiC MOSFET through experiment and simulation. Microelectron. J. 164: 106807 (2025)

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