"A 4H-SiC double trench MOSFET with split gate and integrated MPS diode."

Disen Peng, Quanyuan Feng (2022)

> Home

Details and statistics

DOI: 10.1016/J.MEJO.2022.105553

access: closed

type: Journal Article

metadata version: 2023-09-30

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mj/PengF22
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mj/PengF22
Disen Peng, Quanyuan Feng:
A 4H-SiC double trench MOSFET with split gate and integrated MPS diode. Microelectron. J. 128: 105553 (2022)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.