"Self-aligned In0.49Ga0.51P/GaAs HBT DC and RF ..."

Ruiying Shi et al. (2004)

> Home

Details and statistics

DOI: 10.1016/J.MEJO.2004.05.002

access: closed

type: Journal Article

metadata version: 2020-02-22

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mj/ShiGLSY04
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mj/ShiGLSY04
Ruiying Shi, Min Gong, Xunchun Liu, Haifen Sun, Zhipeng Yuan:
Self-aligned In_0.49Ga_0.51P/GaAs HBT DC and RF characteristics related with orientations. Microelectron. J. 35(11): 923-925 (2004)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.