"Self-clamped P-shield 4H-SiC trench MOSFET for low turn-off loss and ..."

Lijuan Wu et al. (2024)

> Home

Details and statistics

DOI: 10.1016/J.MEJO.2024.106307

access: closed

type: Journal Article

metadata version: 2024-08-22

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mj/WuYYTYZLL24
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mj/WuYYTYZLL24
Lijuan Wu, Guanglin Yang, Deqiang Yang, Zigui Tu, Jie Yuan, Dongsheng Zhao, Mengjiao Liu, Jiahui Liang:
Self-clamped P-shield 4H-SiC trench MOSFET for low turn-off loss and suppress switching oscillation. Microelectron. J. 151: 106307 (2024)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.