"Dielectric breakdown characteristics and interface trapping of hafnium ..."

Nian Zhan et al. (2005)

> Home

Details and statistics

DOI: 10.1016/J.MEJO.2004.10.006

access: closed

type: Journal Article

metadata version: 2020-02-22

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mj/ZhanPWNK05
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mj/ZhanPWNK05
Nian Zhan, M. C. Poon, Hei Wong, K. L. Ng, Chi-Wah Kok:
Dielectric breakdown characteristics and interface trapping of hafnium oxide films. Microelectron. J. 36(1): 29-33 (2005)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.