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"Experimental study of the instabilities observed in 650 V enhancement mode ..."

Carmine Abbate et al. (2017)

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DOI: 10.1016/J.MICROREL.2017.07.020

access: closed

type: Journal Article

metadata version: 2020-02-22

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Carmine Abbate, Giovanni Busatto, Annunziata Sanseverino, D. Tedesco, Francesco Velardi:
Experimental study of the instabilities observed in 650 V enhancement mode GaN HEMT during short circuit. Microelectron. Reliab. 76-77: 314-320 (2017)

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