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"Behaviour of 1.2 kV SiC JBS diodes under repetitive high power stress."

Viorel Banu et al. (2008)

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DOI: 10.1016/J.MICROREL.2008.07.054

access: closed

type: Journal Article

metadata version: 2020-02-22

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Viorel Banu, Pierre Brosselard, Xavier Jordà, Josep Montserrat, Philippe Godignon, José Millán:
Behaviour of 1.2 kV SiC JBS diodes under repetitive high power stress. Microelectron. Reliab. 48(8-9): 1444-1448 (2008)

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