"Carrier injection efficiency for the reliability study of 3.5-1.2 nm thick ..."

Alain Bravaix et al. (2003)

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DOI: 10.1016/S0026-2714(03)00178-1

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type: Journal Article

metadata version: 2023-09-30

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Alain Bravaix, C. Trapes, Didier Goguenheim, Nathalie Revil, E. Vincent:
Carrier injection efficiency for the reliability study of 3.5-1.2 nm thick gate-oxide CMOS technologies. Microelectron. Reliab. 43(8): 1241-1246 (2003)

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