"Experimental study and numerical investigation on the formation of single ..."

Giovanni Busatto et al. (2010)

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DOI: 10.1016/J.MICROREL.2010.07.039

access: closed

type: Journal Article

metadata version: 2024-10-06

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Giovanni Busatto, Giuseppe Currò, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi:
Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET. Microelectron. Reliab. 50(9-11): 1842-1847 (2010)

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