default search action
"Reliability impacts of high-speed 3-bit/cell Schottky barrier nanowire ..."
Wei Chang et al. (2015)
- Wei Chang, Chun-Hsing Shih, Yan-Xiang Luo, Wen-Fa Wu, Chen-Hsin Lien:
Reliability impacts of high-speed 3-bit/cell Schottky barrier nanowire charge-trapping memories. Microelectron. Reliab. 55(1): 74-80 (2015)
manage site settings
To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.