"Gate leakage properties of MOS devices with tri-layer high-k gate dielectric."

W. B. Chen et al. (2007)

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DOI: 10.1016/J.MICROREL.2006.06.002

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type: Journal Article

metadata version: 2023-10-02

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W. B. Chen, Jing-Ping Xu, Pui-To Lai, Y. P. Li, S. G. Xu:
Gate leakage properties of MOS devices with tri-layer high-k gate dielectric. Microelectron. Reliab. 47(6): 937-943 (2007)

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