"Gate metal interdiffusion induced degradation in space-qualified GaAs PHEMTs."

Yeong-Chang Chou et al. (2006)

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DOI: 10.1016/J.MICROREL.2005.02.012

access: closed

type: Journal Article

metadata version: 2022-07-20

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Yeong-Chang Chou, Denise Leung, Ronald Grundbacher, Richard Lai, Quin Kan, P. H. Liu, David Eng, Thomas R. Block, Aaron K. Oki:
Gate metal interdiffusion induced degradation in space-qualified GaAs PHEMTs. Microelectron. Reliab. 46(1): 24-40 (2006)

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