"Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, ..."

Arnaud Curutchet et al. (2003)

> Home

Details and statistics

DOI: 10.1016/S0026-2714(03)00339-1

access: closed

type: Journal Article

metadata version: 2020-04-16

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/CurutchetMLTGMU03
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/CurutchetMLTGMU03
Arnaud Curutchet, Nathalie Malbert, Nathalie Labat, André Touboul, Christophe Gaquière, A. Minko, Michael J. Uren:
Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates. Microelectron. Reliab. 43(9-11): 1713-1718 (2003)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.