"Application of an MOS tunnel transistor for measurements of the tunneling ..."

I. V. Grekhov et al. (2007)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2007.01.077

access: closed

type: Journal Article

metadata version: 2022-10-02

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/GrekhovKTV07
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/GrekhovKTV07
I. V. Grekhov, G. G. Kareva, S. E. Tyaginov, M. I. Vexler:
Application of an MOS tunnel transistor for measurements of the tunneling parameters and of the parameters of electron energy relaxation in silicon. Microelectron. Reliab. 47(4-5): 669-672 (2007)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.