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"HCI and NBTI induced degradation in gate-all-around silicon nanowire ..."

Ru Huang et al. (2011)

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DOI: 10.1016/J.MICROREL.2011.07.080

access: closed

type: Journal Article

metadata version: 2024-06-03

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Ru Huang, Runsheng Wang, Changze Liu, Liangliang Zhang, Jing Zhuge, Yu Tao, Jinbin Zou, Yuchao Liu, Yangyuan Wang:
HCI and NBTI induced degradation in gate-all-around silicon nanowire transistors. Microelectron. Reliab. 51(9-11): 1515-1520 (2011)

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