"Trade-off analysis of the p-base doping on ruggedness of SiC MOSFETs."

Bhagyalakshmi Kakarla et al. (2017)

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DOI: 10.1016/J.MICROREL.2017.07.016

access: closed

type: Journal Article

metadata version: 2021-10-14

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Bhagyalakshmi Kakarla, Selamnesh Nida, Johanna Mueting, Thomas Ziemann, Ivana Kovacevic-Badstuebner, Ulrike Grossner:
Trade-off analysis of the p-base doping on ruggedness of SiC MOSFETs. Microelectron. Reliab. 76-77: 267-271 (2017)

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