"Investigation of the reliability of 4H-SiC MOS devices for high ..."

Martin Le-Huu et al. (2011)

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DOI: 10.1016/J.MICROREL.2011.03.015

access: closed

type: Journal Article

metadata version: 2020-02-22

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Martin Le-Huu, Holger Schmitt, Stefan Noll, Michael Grieb, Frederik F. Schrey, Anton J. Bauer, Lothar Frey, Heiner Ryssel:
Investigation of the reliability of 4H-SiC MOS devices for high temperature applications. Microelectron. Reliab. 51(8): 1346-1350 (2011)

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