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"Die degradation effect on aging rate in accelerated cycling tests of SiC ..."

Haoze Luo et al. (2017)

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DOI: 10.1016/J.MICROREL.2017.07.004

access: closed

type: Journal Article

metadata version: 2020-02-22

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Haoze Luo, Nick Baker, Francesco Iannuzzo, Frede Blaabjerg:
Die degradation effect on aging rate in accelerated cycling tests of SiC power MOSFET modules. Microelectron. Reliab. 76-77: 415-419 (2017)

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