"Radiation-induced shallow trench isolation leakage in 180-nm flash memory ..."

Bingxu Ning et al. (2012)

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DOI: 10.1016/J.MICROREL.2011.07.090

access: closed

type: Journal Article

metadata version: 2020-02-22

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Bingxu Ning, Zhengxuan Zhang, Zhangli Liu, Zhiyuan Hu, Ming Chen, Dawei Bi, Shichang Zou:
Radiation-induced shallow trench isolation leakage in 180-nm flash memory technology. Microelectron. Reliab. 52(1): 130-136 (2012)

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