"Electrical and thermal failure modes of 600 V p-gate GaN HEMTs."

Thorsten Oeder, Alberto Castellazzi, Martin Pfost (2017)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2017.06.046

access: closed

type: Journal Article

metadata version: 2020-06-15

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/OederCP17
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/OederCP17
Thorsten Oeder, Alberto Castellazzi, Martin Pfost:
Electrical and thermal failure modes of 600 V p-gate GaN HEMTs. Microelectron. Reliab. 76-77: 321-326 (2017)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.