"Optimization of HfSiON using a design of experiment (DOE) approach on 0.45 ..."

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Creator: Schloss Dagstuhl - Leibniz Center for Informatics
Published: 1993
License: https://creativecommons.org/publicdomain/zero/1.0/
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A. Rothschild et al. (2007)

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A. Rothschild, R. Mitsuhashi, C. Kerner, X. Shi, J. L. Everaert, L. Date, Thierry Conard, Olivier Richard, C. Vrancken, R. Verbeeck, Anabela Veloso, A. Lauwers, M. de Potter de ten Broeck, I. Debusschere, M. Jurczak, M. Niwa, Philippe Absil, S. Biesemans:
Optimization of HfSiON using a design of experiment (DOE) approach on 0.45 V V_t Ni-FUSI CMOS transistors. Microelectron. Reliab. 47(4-5): 521-524 (2007)

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