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"Lateral base design rules for optimized low-frequency noise of ..."

Martin Sandén et al. (2001)

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DOI: 10.1016/S0026-2714(01)00016-6

access: closed

type: Journal Article

metadata version: 2020-02-22

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Martin Sandén, B. Gunnar Malm, Jan V. Grahn, Mikael Östling:
Lateral base design rules for optimized low-frequency noise of differentially grown SiGe heterojunction bipolar transistors. Microelectron. Reliab. 41(6): 881-886 (2001)

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