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"Mechanisms of spontaneous recovery in positive gate bias stressed power ..."

Ninoslav Stojadinovic et al. (2002)

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DOI: 10.1016/S0026-2714(02)00171-3

access: closed

type: Journal Article

metadata version: 2024-02-05

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Ninoslav Stojadinovic, Ivica Manic, Snezana Djoric-Veljkovic, Vojkan Davidovic, Danijel Dankovic, Snezana Golubovic, Sima Dimitrijev:
Mechanisms of spontaneous recovery in positive gate bias stressed power VDMOSFETs. Microelectron. Reliab. 42(9-11): 1465-1468 (2002)

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