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"Impact of device geometry and doping strategy on linearity and RF ..."

L. Yang et al. (2004)

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DOI: 10.1016/J.MICROREL.2004.04.003

access: closed

type: Journal Article

metadata version: 2023-09-12

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L. Yang, Asen Asenov, Jeremy R. Watling, M. Boriçi, John R. Barker, Scott Roy, K. Elgaid, Iain Thayne, T. Hackbarth:
Impact of device geometry and doping strategy on linearity and RF performance in Si/SiGe MODFETs. Microelectron. Reliab. 44(7): 1101-1107 (2004)

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