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"Effects of La2O3 incorporation in HfO2 ..."

D. Zade et al. (2011)

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DOI: 10.1016/J.MICROREL.2010.11.004

access: closed

type: Journal Article

metadata version: 2021-10-14

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  - https://dblp.org/rec/journals/mr/ZadeSKSATNSNHSI11
D. Zade, Soshi Sato, Kuniyuki Kakushima, A. Srivastava, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Chandan Kumar Sarkar, Hiroshi Iwai:
Effects of La₂O₃ incorporation in HfO₂ gated nMOSFETs on low-frequency noise. Microelectron. Reliab. 51(4): 746-750 (2011)

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