"3-D simulation study of single event effects of SiGe heterojunction ..."

Jinxin Zhang et al. (2015)

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DOI: 10.1016/J.MICROREL.2015.06.003

access: closed

type: Journal Article

metadata version: 2025-07-16

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Jinxin Zhang, Chaohui He, Hongxia Guo, Du Tang, Cen Xiong, Pei Li, Xin Wang:
3-D simulation study of single event effects of SiGe heterojunction bipolar transistor in extreme environment. Microelectron. Reliab. 55(8): 1180-1186 (2015)

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