"A Timing Yield Model for SRAM Cells at Sub/Near-Threshold Voltages Based ..."

Shan Shen et al. (2023)

> Home

Details and statistics

DOI: 10.1109/TCAD.2022.3194812

access: closed

type: Journal Article

metadata version: 2023-05-01

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/tcad/ShenCLS23
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/tcad/ShenCLS23
Shan Shen, Peng Cao, Ming Ling, Longxing Shi:
A Timing Yield Model for SRAM Cells at Sub/Near-Threshold Voltages Based on a Compact Drain Current Model. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 42(4): 1223-1234 (2023)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.