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"An 8T Differential SRAM With Improved Noise Margin for Bit-Interleaving in ..."

Anh-Tuan Do et al. (2011)

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DOI: 10.1109/TCSI.2010.2103154

access: closed

type: Journal Article

metadata version: 2021-07-25

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Anh-Tuan Do, Jeremy Yung Shern Low, Joshua Yung Lih Low, Zhi-Hui Kong, Xiaoliang Tan, Kiat Seng Yeo:
An 8T Differential SRAM With Improved Noise Margin for Bit-Interleaving in 65 nm CMOS. IEEE Trans. Circuits Syst. I Regul. Pap. 58-I(6): 1252-1263 (2011)

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