"Pattern Formation With Locally Active S-Type NbO_x Memristors."

Martin Weiher et al. (2019)

> Home

Details and statistics

DOI: 10.1109/TCSI.2019.2894218

access: closed

type: Journal Article

metadata version: 2022-06-23

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/tcas/WeiherHTAMS19
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/tcas/WeiherHTAMS19
Martin Weiher, Melanie Herzig, Ronald Tetzlaff, Alon Ascoli, Thomas Mikolajick, Stefan Slesazeck:
Pattern Formation With Locally Active S-Type NbO_x Memristors. IEEE Trans. Circuits Syst. I Regul. Pap. 66-I(7): 2627-2638 (2019)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.