"A 1-Mb RRAM Macro With 9.8 ns Read Access Time Utilizing Dynamic Reference ..."

Junjie Mu et al. (2024)

> Home

Details and statistics

DOI: 10.1109/TCSII.2024.3379373

access: closed

type: Journal Article

metadata version: 2024-06-18

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/tcasII/MuLKASLDLLK24
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/tcasII/MuLKASLDLLK24
Junjie Mu, Lu Lu, Ju Eon Kim, Byung-Kwon An, Vishal Sharma, Arya Jagath Lekshmi, Putu Andhita Dananjaya, Weng Hong Lai, Wen Siang Lew, Tony Tae-Hyoung Kim:
A 1-Mb RRAM Macro With 9.8 ns Read Access Time Utilizing Dynamic Reference Voltage for Reliable Sensing Operation. IEEE Trans. Circuits Syst. II Express Briefs 71(5): 2564-2568 (2024)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.