"A Unified Electrothermal Behavior Modeling Method for Both SiC MOSFET and ..."

Xiao Long et al. (2021)

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DOI: 10.1109/TIE.2020.3026283

access: closed

type: Journal Article

metadata version: 2023-04-20

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Xiao Long, Zhao Jun, Botao Zhang, Dongdong Chen, Liang Wu:
A Unified Electrothermal Behavior Modeling Method for Both SiC MOSFET and GaN HEMT. IEEE Trans. Ind. Electron. 68(10): 9366-9375 (2021)

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