"High-Voltage 4H-SiC Power MOSFETs With Boron-Doped Gate Oxide."

Victor Soler et al. (2017)

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DOI: 10.1109/TIE.2017.2723865

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type: Journal Article

metadata version: 2021-08-03

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Victor Soler, Maria Cabello, Maxime Berthou, Josep Montserrat, José Rebollo, Philippe Godignon, Andrei Mihaila, Maria R. Rogina, Alberto Rodriguez, Javier Sebastián:
High-Voltage 4H-SiC Power MOSFETs With Boron-Doped Gate Oxide. IEEE Trans. Ind. Electron. 64(11): 8962-8970 (2017)

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