"Study and Implementation of 600-V High-Voltage Gate Driver IC With the ..."

Jing Zhu et al. (2021)

> Home

Details and statistics

DOI: 10.1109/TIE.2020.2970673

access: closed

type: Journal Article

metadata version: 2025-10-17

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/tie/ZhuYLSCYZLZZHG21
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/tie/ZhuYLSCYZLZZHG21
Jing Zhu, Siyuan Yu, Yangyang Lu, Weifeng Sun, Chuanyi Cheng, Ding Yan, Yunwu Zhang, Shaohong Li, Long Zhang, Sen Zhang, Nailong He, Yan Gu:
Study and Implementation of 600-V High-Voltage Gate Driver IC With the Common-Mode Dual-Interlock Technique for GaN Devices. IEEE Trans. Ind. Electron. 68(2): 1506-1514 (2021)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.