"Characterization of the Proximity Effect From Tungsten TSVs on 130-nm CMOS ..."

Sangwook Han, David D. Wentzloff (2014)

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DOI: 10.1109/TVLSI.2013.2279639

access: closed

type: Journal Article

metadata version: 2020-03-11

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Sangwook Han, David D. Wentzloff:
Characterization of the Proximity Effect From Tungsten TSVs on 130-nm CMOS Devices in 3-D ICs. IEEE Trans. Very Large Scale Integr. Syst. 22(9): 2025-2029 (2014)

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