"Leakage Reduction in 18 nm FinFET based 7T SRAM Cell using Self ..."

T. Santosh Kumar, Suman Lata Tripathi (2021)

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DOI: 10.1007/S11277-020-07765-6

access: closed

type: Journal Article

metadata version: 2021-02-11

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T. Santosh Kumar, Suman Lata Tripathi:
Leakage Reduction in 18 nm FinFET based 7T SRAM Cell using Self Controllable Voltage Level Technique. Wirel. Pers. Commun. 116(3): 1837-1847 (2021)

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