"Germanium n-channel field effect transistors via graded alloy chemical ..."

Daniel Connelly (2005)

> Home

Details and statistics

DOI: —

access: closed

type: Book or Thesis

metadata version: 2022-08-31

- view
  - electronic edition @ stanford.edu
- export record
  dblp key:
  - phd/us/Connelly05
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/phd/us/Connelly05
Daniel Connelly:
Germanium n-channel field effect transistors via graded alloy chemical vapor deposition epitaxy. Stanford University, USA, 2005

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.