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Publication search results
found 869 matches
- 2024
- P. Mangayarkarasi, Arunkumar K, Anitha Juliette Albert:
Design and Comparison of SEU Tolerant 10T Memory Cell for Radiation Environment Applications. EAI Endorsed Trans. Energy Web 11 (2024) - Sangjin Kim, Zhiyong Li, Soyeon Um, Wooyoung Jo, Sangwoo Ha, Juhyoung Lee, Sangyeob Kim, Donghyeon Han, Hoi-Jun Yoo:
DynaPlasia: An eDRAM In-Memory Computing-Based Reconfigurable Spatial Accelerator With Triple-Mode Cell. IEEE J. Solid State Circuits 59(1): 102-115 (2024) - Jiahao Song, Xiyuan Tang, Haoyang Luo, Haoyi Zhang, Xin Qiao, Zixuan Sun, Xiangxing Yang, Zihan Wu, Yuan Wang, Runsheng Wang, Ru Huang:
A 4-bit Calibration-Free Computing-In-Memory Macro With 3T1C Current-Programed Dynamic-Cascode Multi-Level-Cell eDRAM. IEEE J. Solid State Circuits 59(3): 842-854 (2024) - Mayuresh Savargaonkar, Isaiah Oyewole, Abdallah A. Chehade, Ala A. Hussein:
Uncorrelated Sparse Autoencoder With Long Short-Term Memory for State-of-Charge Estimations in Lithium-Ion Battery Cells. IEEE Trans Autom. Sci. Eng. 21(1): 15-26 (2024) - Kaili Zhang, Zhongzhen Tong, Xinxin Liang, Chengzhi Wang, You Wang, Yue Zhang, Weisheng Zhao, Lang Zeng, Deming Zhang:
A Charge-Domain Compute-In-Memory Macro With Cell-Embedded DA Conversion and Two-Stage AD Conversion for Bit-Scalable MAC Operation. IEEE Trans. Circuits Syst. II Express Briefs 71(3): 1077-1081 (2024) - Christian Lanius, Tobias Gemmeke:
Fully Digital, Standard-Cell-Based Multifunction Compute-in-Memory Arrays for Genome Sequencing. IEEE Trans. Very Large Scale Integr. Syst. 32(1): 30-41 (2024) - Hossein Khosravi, Ricardo Carmona-Galán, Jorge Fernández-Berni, Nabeeh Kandalaft:
A novel 10T SRAM bit-cell with high static noise margin and low power consumption for binary In-Memory Computing. CCWC 2024: 728-733 - 2023
- Hanan Marinberg, Esteban Garzón, Tzachi Noy, Marco Lanuzza, Adam Teman:
Efficient Implementation of Many-Ported Memories by Using Standard-Cell Memory Approach. IEEE Access 11: 94885-94897 (2023) - Sergiu Cosmin Nistor, Mohammad Jaradat, Razvan Liviu Nistor:
Developing an Algorithm for Fast Performance Estimation of Recurrent Memory Cells. IEEE Access 11: 112877-112890 (2023) - Yun-Jae Oh, Inyoung Lee, Yunejae Suh, Daewoong Kang, Il Hwan Cho:
3D NAND Flash Memory Cell Current and Interference Characteristics Improvement With Multiple Dielectric Spacer. IEEE Access 11: 113704-113711 (2023) - Shao-Xiang Go, Qiang Wang, Kejie Huang, Tae Hoon Lee, Natasa Bajalovic, Desmond K. Loke:
Toward Single-Cell Multiple-Strategy Processing Shift Register Powered by Phase-Change Memory Materials. Adv. Intell. Syst. 5(3) (2023) - Lioz Noy, Itay Barnea, Matan Dudaie, Dotan Kamber, Mattan Levi, Natan T. Shaked:
Location Prediction of Sperm Cells Using Long Short-Term Memory Networks. Adv. Intell. Syst. 5(9) (2023) - Yan Huang, Kaihua Cao, Kun Zhang, Jinkai Wang, Kewen Shi, Zuolei Hao, Wenlong Cai, Ao Du, Jialiang Yin, Qing Yang, Junfeng Li, Jianfeng Gao, Chao Zhao, Weisheng Zhao:
Implementation of 16 Boolean logic operations based on one basic cell of spin-transfer-torque magnetic random access memory. Sci. China Inf. Sci. 66(6) (2023) - Hardik Joshi, Brajesh Kumar Jha:
2D memory-based mathematical analysis for the combined impact of calcium influx and efflux on nerve cells. Comput. Math. Appl. 134: 33-44 (2023) - Tom Eivind Glover, Pedro G. Lind, Anis Yazidi, Evgeny Osipov, Stefano Nichele:
Investigating Rules and Parameters of Reservoir Computing with Elementary Cellular Automata, with a Criticism of Rule 90 and the Five-Bit Memory Benchmark. Complex Syst. 32(3): 309-351 (2023) - Haider Al Kim, Sven Puchinger, Ludo Tolhuizen, Antonia Wachter-Zeh:
Coding and bounds for partially defective memory cells. Des. Codes Cryptogr. 91(12): 4019-4058 (2023) - Ali Newaz Bahar, Angshuman Khan:
Efficient modelling of random access memory cell: an approach using QCA nanocomputing. Turkish J. Electr. Eng. Comput. Sci. 31(3): 646-659 (2023) - Abdolreza Darabi, Mohammad Reza Salehi, Ebrahim Abiri:
One-sided 10T static-random access memory cell for energy-efficient and noise-immune internet of things applications. Int. J. Circuit Theory Appl. 51(1): 379-397 (2023) - Mukku Pavan Kumar, Rohit Lorenzo:
A review on radiation-hardened memory cells for space and terrestrial applications. Int. J. Circuit Theory Appl. 51(1): 475-499 (2023) - Giannis Haralabopoulos, Gerasimos Razis, Ioannis Anagnostopoulos:
A Modified Long Short-Term Memory Cell. Int. J. Neural Syst. 33(7): 2350039:1-2350039:13 (2023) - Fabrice Deluzet, Gwenael Fubiani, Laurent Garrigues, Clément Guillet, Jacek Narski:
Efficient parallelization for 3d-3v sparse grid Particle-In-Cell: Shared memory architectures. J. Comput. Phys. 480: 112022 (2023) - Ashish Sachdeva:
Low Power Static Random-Access Memory Cell Design for Mobile Opportunistic Networks Sensor Nodes. J. Circuits Syst. Comput. 32(5): 2350078:1-2350078:32 (2023) - M. V. Nageswara Rao, Mamidipaka Hema, Ramakrishna Raghutu, Ramakrishna S. S. Nuvvula, Polamarasetty P. Kumar, Ilhami Colak, Baseem Khan:
Design and Development of Efficient SRAM Cell Based on FinFET for Low Power Memory Applications. J. Electr. Comput. Eng. 2023: 7069746:1-7069746:13 (2023) - Chun-Yen Yao, Tsung-Yen Wu, Han-Chung Liang, Yu-Kai Chen, Tsung-Te Liu:
A Fully Bit-Flexible Computation in Memory Macro Using Multi-Functional Computing Bit Cell and Embedded Input Sparsity Sensing. IEEE J. Solid State Circuits 58(5): 1487-1495 (2023) - Wang Ye, Linfang Wang, Zhidao Zhou, Junjie An, Weizeng Li, Hanghang Gao, Zhi Li, Jinshan Yue, Hongyang Hu, Xiaoxin Xu, Jianguo Yang, Jing Liu, Dashan Shang, Feng Zhang, Jinghui Tian, Chunmeng Dou, Qi Liu, Ming Liu:
A 28-nm RRAM Computing-in-Memory Macro Using Weighted Hybrid 2T1R Cell Array and Reference Subtracting Sense Amplifier for AI Edge Inference. IEEE J. Solid State Circuits 58(10): 2839-2850 (2023) - Jonghak Yuh, Yen-Lung Jason Li, Heguang Li, Yoshihiro Oyama, Cynthia Hsu, Pradeep Anantula, Gwang Yeong Stanley Jeong, Anirudh Amarnath, Siddhesh Darne, Sneha Bhatia, Tianyu Tang, Aditya Arya, Naman Rastogi, Naoki Ookuma, Hiroyuki Mizukoshi, Alex Yap, Demin Wang, Steve Kim, Yonggang Wu, Min Peng, Jason Lu, Tommy Ip, Seema Malhotra, Taekeun Han, Masatoshi Okumura, Jiwen Liu, Jeongduk John Sohn, Hardwell Chibvongodze, Muralikrishna Balaga, Akihiro Matsuda, Chen Chen, Indra K. V, V. S. N. K. Chaitanya G., Venky Ramachandra, Yosuke Kato, Ravi Kumar, Huijuan Wang, Farookh Moogat, In-Soo Yoon, Kazushige Kanda, Takahiro Shimizu, Noboru Shibata, Kosuke Yanagidaira, Takuyo Kodama, Ryo Fukuda, Yasuhiro Hirashima, Mitsuhiro Abe:
A 1-Tb 4-b/cell 4-Plane 162-Layer 3-D Flash Memory With 2.4-Gb/s IO Interface. IEEE J. Solid State Circuits 58(1): 316-328 (2023) - Epiphany Jebamalar Leavline, Sugantha Arumugam:
Radiation hardened 11T memory cell for space applications. Microprocess. Microsystems 102: 104914 (2023) - Venu Birudu, Siva Sankar Yellampalli, Ramesh Vaddi:
A negative capacitance FET based energy efficient 6T SRAM computing-in-memory (CiM) cell design for deep neural networks. Microelectron. J. 139: 105867 (2023) - Licai Hao, Li Liu, Qi Shi, Bin Qiang, Zhengya Li, Nianlong Liu, Chenghu Dai, Qiang Zhao, Chunyu Peng, Wenjuan Lu, Zhiting Lin, Xiulong Wu:
Design of radiation-hardened memory cell by polar design for space applications. Microelectron. J. 132: 105691 (2023) - Pengfei Li, Xiuying Wang, Yin Zhang, Haoyu Wang, Jianjie Lu, Qiang Zhao, Licai Hao, Chunyu Peng, Wenjuan Lu, Zhiting Lin, Xiulong Wu:
Novel radiation-hardened-by-design (RHBD) 14T memory cell for aerospace applications in 65 nm CMOS technology. Microelectron. J. 141: 105954 (2023)
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