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DRC 2020: Columbus, OH, USA
- 2020 Device Research Conference, DRC 2020, Columbus, OH, USA, June 21-24, 2020. IEEE 2020, ISBN 978-1-7281-7047-3
- Pawana Shrestha, Matthew Guidry, Brian Romanczyk, Rohit R. Karnaty, Nirupam Hatui, Christian Wurm, Athith Krishna, Shubhra S. Pasayat, Stacia Keller, James F. Buckwalter, Umesh K. Mishra:
A Novel Concept using Derivative Superposition at the Device-Level to Reduce Linearity Sensitivity to Bias in N-polar GaN MISHEMT. 1-2 - John Stearns, Garret Moddel:
High Frequency Characteristics of Graphene Geometric Diodes. 1-2 - Chao-Yin Kuo, Shui-Jinn Wang, Po-Ting Chen, Rong-Ming Ko:
Near-Nernstian pH Sensors Based on Hydrothermally Grown NiO Nanosheets on Hierarchically Roughened Si Substrates. 1-2 - Aditi Agarwal, Kijeong Han, B. Jayant Baliga:
2.3 kV 4H-SiC Accumulation-channel JBSFETs: Experimental Comparison of Linear, Hexagonal and Octagonal Cell Topologies. 1-2 - Yuan-Chun Luo, Jae Hur, Panni Wang, Asif Islam Khan, Shimeng Yu:
Modeling Multi-states in Ferroelectric Tunnel Junction. 1-2 - Muhammad Bilal Khan, Sayantan Ghosh, Slawomir Prucnal, Tom Mauersberger, René Hübner, Maik Simon, Thomas Mikolajick, Artur Erbe, Yordan M. Georgiev:
Towards Scalable Reconfigurable Field Effect Transistor using Flash Lamp Annealing. 1-2 - Ahmad Zubair, Joshua A. Perozek, John Niroula, O. Aktas, V. Odnoblyudov, Tomás Palacios:
First Demonstration of GaN Vertical Power FinFETs on Engineered Substrate. 1-2 - Ahmad Zubair, John Niroula, Nadim Chowdhury, Yuhao Zhang, Jori Lemettinen, Tomás Palacios:
Materials and Technology Issues for the Next Generation of Power Electronic Devices. 1-2 - Aravindh Kumar, Koosha Nassiri Nazif, Pranav Ramesh, Krishna Saraswat:
Doped WS2 transistors with large on-off ratio and high on-current. 1-2 - Yi-Ping Huang, Ching-Sung Lee, Wei-Chou Hsu:
Normally-Off InAlN/GaN Fin-MOSHEMT with Fluorine Treatment. 1-2 - Jayatika Sakhuja, Sandip Lashkare, Vivek Saraswat, Udayan Ganguly:
Thermal Engineering of Volatile Switching in PrMnO3 RRAM: Non-Linearity in DC IV Characteristics and Transient Switching Speed. 1-2 - H. Aquino, D. Connelly, Alexei O. Orlov, J. Chisum, Gary H. Bernstein, Wolfgang Porod:
Using Coplanar Waveguides as Spin-Wave Sources with Improved Bandwidth. 1-2 - Asir Intisar Khan, Alwin Daus, Eric Pop:
Flexible Low-Power Superlattice-Like Phase Change Memory. 1 - Jinyoung Park, Dacheng Mao, Yaowei Xie, Zheshun Xiong, Guangyu Xu:
High-Density Multilayer Graphene Microelectrode Arrays for Optogenetic Electrophysiology in Human Embryonic Kidney Cells. 1-2 - Xiaohan Wu, Ruijing Ge, Deji Akinwande, Jack C. Lee:
Understanding of Multiple Resistance States by Current-sweep Measurement and Compliance Current Modulation in 2D MoS2-based Non-volatile Resistance Switching Devices. 1-2 - Niharika Thakuria, Atanu K. Saha, Sandeep Krishna Thirumala, Daniel Schulman, Saptarshi Das, Sumeet Kumar Gupta:
Polarization-induced Strain-coupled TMD FETs (PS FETs) for Non-Volatile Memory Applications. 1-2 - Raihan Sayeed Khan, A. B. M. Hasan Talukder, Faruk Dirisaglik, Ali Gokirmak, Helena Silva:
Stopping Resistance Drift in Phase Change Memory Cells. 1-2 - Yury Yu. Illarionov, A. G. Banshchikov, Theresia Knobloch, Dmitry K. Polyushkin, S. Wachter, V. V. Fedorov, S. M. Suturin, M. Stöger-Pollach, Thomas Mueller, M. I. Vexler, N. S. Sokolov, Tibor Grasser:
Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics. 1-2 - Elliott R. Brown, Weidong Zhang, Parastou Fakhimi, Tyler A. Growden, Paul R. Berger:
RTD Light Emission around 1550 nm with IQE up to 6% at 300 K. 1-2 - Kyung Eun Park, Shun'ichiro Ohmi:
High-k LaBxNy gate insulator formed by the Ar/N2 plasma sputtering of N-doped LaB6 metal thin films and its application to floating-gate memory. 1-2 - Mehdi Saremi, Ashish Pal, Liu Jiang, El Mehdi Bazizi, Helen Lee, Xi-Wei Lin, Blessy Alexander, Buvna Ayyagari-Sangamalli:
Modeling and Optimization of Advanced 3D NAND Memory. 1-2 - Devansh Saraswat, Wenshen Li, Kazuki Nomoto, Debdeep Jena, Huili Grace Xing:
Very High Parallel-Plane Surface Electric Field of 4.3 MV/cm in Ga2O3 Schottky Barrier Diodes with PtOx Contacts. 1-2 - Chia-Chun Yen, An-Hung Tai, Yu-Chieh Liu, Chun-Hung Yeh, C. W. Liu:
Mobility Enhancement and Reliability Characterization of Back-Channel-Etch Amorphous InGaZnO TFT with Double Layers. 1-2 - Brian P. Downey, Andy Xie, Shawn Mack, D. Scott Katzer, James G. Champlain, Yu Cao, Neeraj Nepal, Tyler A. Growden, Vikrant J. Gokhale, Robert L. Coffie, Matthew T. Hardy, Edward Beam, Cathy Lee, David J. Meyer:
Micro-transfer Printing of GaN HEMTs for Heterogeneous Integration and Flexible RF Circuit Design. 1-2 - Fiheon Imroze, C. A. Mithun, Karunakaran Logesh, P. Venkatakrishnan, S. Dutta:
Effect of recessed electrodes on contact resistance in Organic Thin Film Transistor based on polymer dielectric. 1-2 - Seunghyun Lee, Sri Harsha Kodati, Douglas R. Fink, Theodore J. Ronningen, Andrew H. Jones, Joe C. Campbell, Martin Winslow, Christoph H. Grein, Sanjay Krishna:
Multiplication characteristics of Al0.4Ga0.07In0.53As avalanche photodiodes grown as digital alloys on InP substrates. 1-2 - Girish Rughoobur, J. Zhao, Lay Jain, Ahmad Zubair, Tomás Palacios, J. Kong, Akintunde Ibitayo Akinwande:
Enabling Atmospheric Operation of Nanoscale Vacuum Channel Transistors. 1-2 - Jeevesh Kumar, Ansh, Hemanjaneyulu Kuruva, Mayank Shrivastava:
Defect Assisted Metal-TMDs Interface Engineering: A First Principle Insight. 1-2 - Woojin Choi, Venkatesh Balasubramanian, Peter M. Asbeck, Shadi A. Dayeh:
Linearity by Synthesis: An Intrinsically Linear AlGaN/GaN-on-Si Transistor with OIP3/(F-1)PDC of 10.1 at 30 GHz. 1-2 - Matthew Hartensveld, Jing Zhang:
Field Effect Light-Emitting Diode Integration for Enhanced Hole Utilization. 1-2 - Chenhao Ren, Mohamadali Malakoutian, Siwei Li, Srabanti Chowdhury:
Hydrogen-terminated diamond FET and GaN HEMT delivering CMOS inverter operation at high-temperature. 1-2 - Yutaro Yamaguchi, Keigo Nakatani, Koon Hoo Teo, Shintaro Shinjo:
Millimeter-Wave GaN Device Modeling for Power Amplifiers. 1-2 - Shun'ichiro Ohmi, Min Gee Kim, Masakazu Kataoka, Masaki Hayashi, Rengie Mark D. Mailig:
Low-Voltage Operation of MFSFET with Ferroelectric Nondoped HfO2 Formed by Kr/O2-Plasma Sputtering. 1-2 - Jun Tao, Debarghya Sarkar, Sizhe Weng, Hyun Uk Chae, Ragib Ahsan, Rehan Kapadia:
A Platform for Monolithic Back End of Line III-V Integration. 1-2 - Dong Ji, Burcu Ercan, Jia Zhuang, Lei Gu, Juan Rivas-Davila, Srabanti Chowdhury:
Demonstration of GaN Impact Ionization Avalanche Transit-Time (IMPATT) Diode. 1-2 - Akanksha Rohit, Yunus Kelestemur, Savas Kaya, Parthiban Rajan:
Ultra-Durable and Reliable High-k Textile Capacitors for Wearables and Robotics. 1-2 - Andrew H. Jones, Stephen D. March, Seth R. Bank, Joe C. Campbell:
2-μm-Compatible AlInAsSb Avalanche Photodiodes. 1-2 - Sourav De, Md. Aftab Baig, Bo-Han Qiu, Darsen D. Lu, Po-Jung Sung, Fu. K. Hsueh, Yao-Jen Lee, Chun-Jung Su:
Tri-Gate Ferroelectric FET Characterization and Modelling for Online Training of Neural Networks at Room Temperature and 233K. 1-2 - Chih-Pin Lin, Hao-Hua Hsu, Tuo-Hung Hou:
Phase and Carrier Polarity Control of Sputtered MoTe2 by Plasma-induced Defect Engineering. 1-2 - Sebastian Lukas, Satender Kataria, Maximilian Prechtl, Oliver Hartwig, Alexander Meledin, Joachim Mayer, Daniel Neumaier, Georg S. Duesberg, Max Christian Lemme:
Correlation of Material Structure and Electronic Properties in 2D Platinum-Diselenide-based Devices. 1-2 - Eldad Bahat-Treidel, Oliver Hilt, H. Christopher, A. Klehr, A. Ginolas, A. Liero, Joachim Würfl:
The influence of the gate trench orientation to the crystal plane on the conduction properties of vertical GaN MISFETs for laser driving applications. 1-2 - Wenjian Liu, Islam Sayed, Brian Romanczyk, Nirupam Hatui, Jana Georgieva, Haoran Li, Stacia Keller, Umesh K. Mishra:
Near-ideal Ru/N-polar GaN Schottky diode with ultralow reverse leakage. 1-2 - Ava J. Tan, Li-Chen Wang, Yu-Hung Liao, Jong-Ho Bae, Chenming Hu, Sayeef S. Salahuddin:
Reliability of Ferroelectric HfO2-based Memories: From MOS Capacitor to FeFET. 1-2 - Karam Cho, Sandeep Krishna Thirumala, X. Liu, Niharika Thakuria, Zhihong Chen, Sumeet Kumar Gupta:
Utilizing Valley-Spin Hall Effect in WSe2 for Low Power Non-Volatile Flip-Flop Design. 1-2 - Pao-Chuan Shih, Girish Rughoobur, Peng Xiang, Kai Liu, Kai Cheng, Akintunde Ibitayo Akinwande, Tomás Palacios:
GaN Nanowire Field Emitters with a Self-Aligned Gate Process. 1-2
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