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10th EMC Compo 2015: Edinburgh, UK
- 10th International Workshop on the Electromagnetic Compatibility of Integrated Circuits, EMC Compo 2015, Edinburgh, UK, November 10-13, 2015. IEEE 2015, ISBN 978-1-4673-7897-0

- Welcome to EMC Compo 2015.

- Bernd Deutschmann

, Gunter Winkler, Timuçin Karaca
:
Emission reduction in Class D audio amplifiers by optimizing spread spectrum modulation. 1-6 - Tvrtko Mandic, Raul Blecic, Renaud Gillon

, Adrijan Baric:
DC/DC converter dead-time variation analysis and far-field radiation estimation. 7-12 - Matthieu Deloge, Arnoud P. van der Wel, Shishir Goyal, Gerald Kwakernaat, Adrien Schoof:

A highly-digitized automotive CAN transceiver in 0.14µm high-voltage SOI CMOS. 13-17 - Alexis Schindler, Benno Koeppl, Bernhard Wicht

:
EMC and switching loss improvement for fast switching power stages by di/dt, dv/dt optimization with 10ns variable current source gate driver. 18-23 - Mohammed Amellall, Sjoerd Op't Land, Richard Perdriau, Mohammed Ramdani, Ali Ahaitouf, M'hamed Drissi:

Direct power injection on functional and non-functional signals of SPI EEPROM memories. 24-28 - Jérémy Raoult, Pierre Payet, Rachid Omarouayache, Laurent Chusseau:

Electromagnetic coupling circuit model of a magnetic near-field probe to a microstrip line. 29-33 - Veljko Tomasevic, Alexandre Boyer, Sonia Ben Dhia:

Bandgap failure study due to parasitic bipolar substrate coupling in Smart Power mixed ICs. 34-38 - Megumi Saito, Takaaki Mizuki

, Hideaki Sone, Yu-ichi Hayashi:
Fundamental study on randomized processing in cryptographic IC using variable clock against Correlation Power Analysis. 39-43 - Mart Coenen, Ming Ye, Huichun Yu:

Dynamic multi-parameter response model for SEED analysis. 44-49 - Andy Degraeve, Davy Pissoort

, Keith Armstrong:
Improving the shielding effectiveness of a board-level shield by bonding it with the waveguide-below-cutoff principle. 50-55 - Yann Bacher, Nicolas Froidevaux, Philippe Dupre, Henri Braquet, Gilles Jacquemod:

Resonance analysis for EMC improvement in integrated circuits. 56-60 - Christofer de Oliveira, Leticia Bolzani Poehls, Fabian Vargas:

On-chip Watchdog to monitor RTOS activity in MPSoC exposed to noisy environment. 61-66 - Sergei Kapora, Marcel Hanssen, Jan Niehof, Quino Sandifort:

Methodology for interference analysis during early design stages of high-performance mixed-signal ICs. 67-71 - Andrea Lavarda, Bernd Deutschmann

:
EMI improved chopped operational amplifier. 72-76 - Kamel Abouda, Guillaume Aulagnier, Eric Rolland, Marc Cousineau:

Analytical approach to study Electromagnetic emission EME contributors on DC/DC applications. 77-82 - Johannes Gert Janschitz:

An EMI robust LIN driver with low electromagnetic emission. 83-86 - Boyuan Zhu, Junwei Lu

, Mingcheng Zhu, Mei Jiang:
Arbitrary shape multilayer interconnects EMC modelling and optimization. 87-91 - SangHyeok Park, Hai Au Huynh, SoYoung Kim:

Analysis of EMI reduction methods of DC-DC buck converter. 92-96 - Mario Rotigni, Mauro Merlo, Martina Cordoni, Paolo Colombo, Valentino Liberali

:
Role of IC substrate and ESD protections in noise propagation: Design and modelling of dedicated test chip in 40 nm technology. 97-102 - Andreas Rauchenecker, Timm Ostermann:

Examination of different adder structures concerning di/dt in a 180nm technology. 103-108 - Adrien Doridant, Jérémy Raoult, Sylvie Jarrix, Jean-Jacques Laurin, Patrick Hoffmann:

Preliminary study of Automatic Control Gain loop subjected to pulse-modulated radiofrequency interference. 109-114 - Philipp Schröter, Fabio Ballarin, Franco Fiori:

Susceptibility to EMI of high side current sensors based on chopper OpAmps. 115-118 - Philipp Schröter, Frank Klotz, Marco Pamato:

RF immunity investigations of linear DC current regulators. 119-124 - Thomas Ungru, Wolfgang Wilkening, Steffen Walker, Renato Negra:

Functional analysis of an integrated communication interface during ESD. 125-130 - Bertrand Vrignon, A. Doridant, K. Abouda, Y. Gao, D. Pagnoux, T. Marek:

Near-field injection on a Safe System Basis Chip at silicon level. 131-136 - Sergey Miropolsky, Stefan Jahn, Frank Klotz, Stephan Frei

:
Experimental validation of the generalized accurate modelling method for system-level bulk current injection setups up to 1 GHz. 137-142 - Hidetoshi Miyahara, Nobuaki Ikehara, Tohlu Matsushima

, Takashi Hisakado, Osami Wada
:
Relation between internal terminal voltage and immunity behavior of LDO regulator circuits. 143-146 - Jongtae Hwang, Youngbong Han, Hyunho Park, Wansoo Nah, Soyoung Kim:

Radiated electromagnetic immunity analysis of VCO using IC stripline method. 147-151 - Lars Glaesser, Sven Koenig:

ESD test at component level. 152-156 - Ahmed Aldabbagh, Alistair Duffy:

Ageing effects on power RF LDMOS reliability using the Transmission Line Matrix method. 157-162 - Alexandre Boyer, M. Cavarroc:

Enhancement of the spatial resolution of near-field immunity maps. 163-168 - Hyun Ho Park, Dong Gun Kam, Young-Bae Park, Jiseong Kim, Jae-Deok Lim, Hark-Byeong Park, Eakhwan Song:

RF interference evaluation of flexible flat cables for high-speed data transmission in mobile devices. 169-173 - Shih-Yi Yuan

, Ting-Wei Yeh, Yung-Chi Tang, Chiu-Kuo Chen:
Time-domain EMI measurement methodology. 174-178 - Boyuan Zhu, Junwei Lu

, Ling Sun, Haiyan Sun:
Computational electromagnetics in shielding analysis of system in package. 179-183 - Priscila Fernandez-Lopez, M. Amara, T. Q. V. Hoang, Frédéric Lafon:

DPI set-up for ICs with differential inputs. 184-189 - Jean-Marc Dienot, Emmanuel Batista, Ioav Ramos:

Thermal-electromagnetic susceptibility behaviors of PWM patterns used in control electronic circuit. 190-195 - Andrea Lavarda, Dominik Amschl, Susanne Bauer, Bernd Deutschmann

:
Characterization of the immunity of integrated circuits (ICs) at wafer level. 196-201 - Manuel Kaufmann, Timm Ostermann:

Simulation model based on JEDEC JS-001-2014 for circuit simulation of HBM ESD pulses on IC level. 202-206 - Muhammet Burak Baran

, Wim Dehaene, Hugo Pues, Kristof Stijnen:
Case study on the differences between EMI resilience of analog ICs against continuous wave, modulated and transient disturbances. 207-211 - Jonghoon J. Kim, Daniel H. Jung, Heegon Kim, Sunkyu Kong, Sumin Choi, Jaemin Lim, Joungho Kim:

TSV-based current probing structure using magnetic coupling in 2.5D and 3D IC. 212-215 - Satoshi Tanaka, Peng Fan, Jingyan Ma, Hanae Aoki, Masahiro Yamaguchi, Makoto Nagata

, Sho Muroga
:
Analysis of on-chip digital noise coupling path for wireless communication IC test chip. 216-221 - Raul Blecic, Renaud Gillon

, Bart Nauwelaers
, Adrijan Baric:
Radiation characteristics of small loop antenna above perforated finite image plane. 222-227 - Herbert Hackl

, Gunter Winkler, Bernd Deutschmann
:
Simulation of radiated emission during the design phase based on scattering parameter measurement. 228-231 - Clovis Pouant, Jérémy Raoult, Patrick Hoffmann:

Large domain validity of MOSFET microwave-rectification response. 232-237 - Etienne Sicard, Alexandre Boyer, Priscila Fernandez-Lopez, An Zhou, Nicolas Marier, Frédéric Lafon:

EMC performance analysis of a processor/memory system using PCB and Package-On-Package. 238-243 - H. Herrmann, W. Horchler, S. Schwarz, Philipp Schröter, Frank Klotz, Marco Brignone, Franco Fiori:

Smart power IC macromodeling for DPI analysis. 244-247 - Jaemin Lim, Manho Lee

, Daniel H. Jung, Jonghoon J. Kim, Sumin Choi, Hyunsuk Lee, Joungho Kim:
Shielding structures for through silicon via (TSV) to active circuit noise coupling in 3D IC. 248-251 - Abhishek Ramanujan, Etienne Sicard, Alexandre Boyer, Jean-Luc Levant, Christian Marot, Frédéric Lafon:

Developing a universal exchange format for Integrated Circuit Emission Model - Conducted Emissions. 252-257 - Marko Magerl, Christian Stockreiter, Oliver Eisenberger, Rainer Minixhofer, Adrijan Baric:

Building interchangeable black-box models of integrated circuits for EMC simulations. 258-263

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