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ORCIDMicroelectronics Journal, Volume 79
Volume 79, September 2018
- Young-Taek Oh, Kyu-Beom Kim
, Sang-Hoon Shin, Hahng Sim, Nguyen Van Toan, Takahito Ono, Yunheub Song:
Impact of etch angles on cell characteristics in 3D NAND flash memory. 1-6 - Alexandru A. Ciubotaru:
Wide-range precision RF peak detectors. 7-16 - Lucas Prilenski, P. R. Mukund:
A sub 1-volt subthreshold bandgap reference at the 14 nm FinFET node. 17-23 - Saranyu Chattopadhyay:
A novel technique for implementing reactance in spin domain using Spin Hall Effect. 24-29 - Amirhossein Moshrefi, Hossein Aghababa, Omid Shoaei:
Statistical estimation of delay in nano-scale CMOS circuits using Burr Distribution. 30-37 - Alessandro Bernardini, Chunfeng Liu, Bing Li, Ulf Schlichtmann:
Efficient spanning-tree-based test pattern generation for Programmable Microfluidic Devices. 38-45 - Giulia Santoro, Marco Vacca, Matteo Bollo, Fabrizio Riente, Mariagrazia Graziano, Maurizio Zamboni:
Exploration of multilayer field-coupled nanomagnetic circuits. 46-56 - V. V. de Araujo, Eduardo F. Simas Filho, A. Oliveira, Wagner Luiz Alves de Oliveira, L. T. C. Esteves:
Integrated circuit for real-time poly-phase power quality monitoring. 57-63 - S. Mimouni, Abdelkader Saïdane, D. Chalabi, M. Abboun-Abid:
Transmission line matrix (TLM) modeling of self-heating in power PIN diodes. 64-69 - Minho Nam, Yeonhun Choi, Kyoung-Rok Cho:
High-speed and energy efficient carry select adder (CSLA) dominated by carry generation logic. 70-78 - Hasan Molaei, Khosrow Hajsadeghi, Ata Khorami:
Design of low power comparator-reduced hybrid ADC. 79-90 - A. N. Ragheb, HyungWon Kim, Jae-Jin Lee:
84% High efficiency dynamic voltage scaler with nano-second settling time based on charge-pump and BWC-DAC. 91-97 - Bijay Kumar Sharma:
The journey of Universal Hybrid-pi model-from its inception to experimental validation and its impact on Analog Circuit Design. 98-106 - Ling Yang, Xuelian Zhang, Qiang Zhang, Manqing Tan, Yude Yu:
A high-speed small-area pixel 16 × 16 ISFET array design using 0.35-μm CMOS process. 107-112
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