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Alexander Kloes
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2020 – today
- 2023
- [c24]Alexander Kloes, Mike Schwarz, Yi Han, Qing-Tai Zhao, Christian Römer:
Comparison between WKB and Wavelet Approach for Analytical Calculation of Tunneling Currents in Schottky Barrier Field-Effect Transistors. MIXDES 2023: 31-36 - [c23]Mike Schwarz, Ghader Darbandy, Christian Römer, Nadine Dersch, Alexander Kloes:
Simulation and Modeling of Silicon Semiconductor Devices and Sensors. MIXDES 2023: 42-46 - 2022
- [c22]Christian Römer, Ghader Darbandy, Mike Schwarz, Jens Trommer
, Maik Simon
, Andre Heinzig, Thomas Mikolajick
, Walter M. Weber, Benjamín Iñíguez, Alexander Kloes:
Compact Modeling of Channel-Resistance Effects in Reconfigurable Field-Effect Transistors. MIXDES 2022: 33-39 - [c21]Aristeidis Nikolaou, Jakob Leise, Jakob Pruefer, Ute Zschieschang, Hagen Klauk, Ghader Darbandy, Benjamín Iñíguez, Alexander Kloes:
Impact of Mechanical Bending on the Performance of Organic Thin-Film Transistors and the Characteristic Temperature of the Density of States. MIXDES 2022: 45-50 - [c20]Nicolas Bogun, Emilio Pérez-Bosch Quesada, Eduardo Pérez, Christian Wenger, Alexander Kloes, Mike Schwarz:
Analytical Calculation of Inference in Memristor-based Stochastic Artificial Neural Networks. MIXDES 2022: 83-88 - 2021
- [c19]Aristeidis Nikolaou, Jakob Leise, Jakob Pruefer, Ute Zschieschang, Hagen Klauk, Ghader Darbandy, Benjamín Iñíguez, Alexander Kloes:
Variability-Aware Characterization of Current Mirrors Based on Organic Thin-Film Transistors on Flexible Substrates. MIXDES 2021: 56-60
2010 – 2019
- 2019
- [c18]Atieh Farokhnejad
, Fabian Horst, Benjamín Iñíguez, François Lime, Alexander Kloes:
Evaluation of Static/Transient Performance of TFET Inverter Regarding Device Parameters Using a Compact Model. ESSDERC 2019: 202-205 - [c17]Jakob Prüfer
, Jakob Simon Leise
, Ghader Darbandy, James W. Borchert, Hagen Klauk, Benjamín Iñíguez, Thomas Gneiting, Alexander Kloes:
Analytical Model for Threshold-Voltage Shift in Submicron Staggered Organic Thin-Film Transistors. MIXDES 2019: 71-75 - [c16]Ghader Darbandy, Christian Römer, Jakob Leise
, Jakob Pruefer, James W. Borchert, Hagen Klauk, Alexander Kloes:
Characterization of the Charge-Trap Dynamics in Organic Thin-Film Transistors. MIXDES 2019: 76-80 - [c15]Fabian Horst, Atieh Farokhnejad
, Benjamín Iñíguez, Alexander Kloes:
Closed-Form Modeling Approach of Trap-Assisted Tunneling Current for Use in Compact TFET Models. MIXDES 2019: 81-86 - 2018
- [c14]Fabian Horst, Atieh Farokhnejad, Benjamín Iñíguez, Alexander Kloes:
An Area Equivalent WKB Approach to Calculate the B2B Tunneling Probability for a Numerical Robust Implementation in TFET Compact Models. MIXDES 2018: 45-50 - [c13]Mike Schwarz, Laurie E. Calvet, John P. Snyder, Tillmann Krauss, Udo Schwalke, Alexander Kloes:
Process and Device Simulation of Schottky Barrier MOSFETs for Analysis of Current Injection. MIXDES 2018: 67-72 - 2017
- [c12]Michael Graef, Franziska Hain, Fabian Hosenfeld, Fabian Horst, Atieh Farokhnejad
, Benjamín Iñíguez, Alexander Kloes:
Analytical modeling of RDF effects on the threshold voltage in short-channel double-gate MOSFETs. MIXDES 2017: 127-131 - [c11]Fabian Hosenfeld, Fabian Horst, Alexander Kloes, Benjamín Iñíguez, François Lime
:
Non-iterative NEGF based model for band-to-band tunneling current in DG TFETs. MIXDES 2017: 143-148 - [c10]Mike Schwarz, John P. Snyder, Tillmann Krauss, Udo Schwalke, Laurie E. Calvet, Alexander Kloes:
Simulation framework for barrier lowering in Schottky barrier MOSFETs. MIXDES 2017: 149-153 - 2016
- [c9]Fabian Horst, Michael Graef, Fabian Hosenfeld, Atieh Farokhnejad
, Franziska Hain, Gia Vinh Luong, Qing-Tai Zhao
, Benjamín Iñíguez, Alexander Kloes:
Implementation of a DC compact model for double-gate Tunnel-FET based on 2D calculations and application in circuit simulation. ESSDERC 2016: 456-459 - [c8]Michael Graef, Franziska Hain, Fabian Hosenfeld, Fabian Horst, Atieh Farokhnejad
, Alexander Kloes, Benjamín Iñíguez:
Comparative numerical analysis and analytical RDF-modeling of MOSFETs and DG Tunnel-FETs. MIXDES 2016: 47-51 - [c7]Fabian Hosenfeld, Michael Graef, Fabian Horst, Alexander Kloes, Benjamín Iñíguez, François Lime
:
Modeling approach for rapid NEGF-based simulation of ballistic current in ultra-short DG MOSFETs. MIXDES 2016: 52-57 - [c6]Mike Schwarz, Alexander Kloes:
Analysis and 2D analytical modeling of III-V Schottky barrier Double-Gate MOSFETs. MIXDES 2016: 310-315 - 2015
- [c5]Atieh Farokhnejad
, Michael Graef, Alexander Kloes:
Wavelet-based calculation of the transmission coefficient for tunneling events in Tunnel-FETs. MIXDES 2015: 210-215 - 2014
- [j2]Michael Graef, Thomas Holtij, Franziska Hain, Alexander Kloes, Benjamín Iñíguez:
A 2D closed form model for the electrostatics in hetero-junction double-gate tunnel-FETs for calculation of band-to-band tunneling current. Microelectron. J. 45(9): 1144-1153 (2014) - [j1]Thomas Holtij, Michael Graef, Alexander Kloes, Benjamín Iñíguez:
Modeling and performance study of nanoscale double gate junctionless and inversion mode MOSFETs including carrier quantization effects. Microelectron. J. 45(9): 1220-1225 (2014) - [c4]Thomas Holtij, Michael Graef, Alexander Kloes, Benjamín Iñíguez:
3-D compact model for nanoscale junctionless triple-gate nanowire MOSFETs. ESSDERC 2014: 258-261 - [c3]Michael Graef, Thomas Holtij, Franziska Hain, Alexander Kloes, Benjamín Iñíguez:
Improved analytical potential modeling in double-gate tunnel-FETs. MIXDES 2014: 49-53 - 2013
- [c2]Thomas Holtij, Michael Graef, Franziska Hain, Alexander Kloes, Benjamín Iñíguez:
Unified charge model for short-channel junctionless double gate MOSFETs. MIXDES 2013: 75-80 - [c1]Michael Graef, Thomas Holtij, Franziska Hain, Alexander Kloes, Benjamín Iñíguez:
Two-dimensional physics-based modeling of electrostatics and band-to-band tunneling in tunnel-FETs. MIXDES 2013: 81-85
Coauthor Index
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last updated on 2024-05-08 21:04 CEST by the dblp team
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