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Yeh-Ning Jou
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2020 – today
- 2023
- [c8]Shao-Chang Huang, Kai-Chieh Hsu, Chih-Hsuan Lin, Chien-Wei Wang, Ching-Ho Li, Chih-Cherng Liao, Jung-Tsun Chuang, Gong-Kai Lin, Lin-Fan Chen, Chun-Chih Chen, Yeh-Ning Jou, Jian-Hsing Lee, Ke-Horng Chen:
Bipolar Transistors' Holding Phenomena. ICCE-Taiwan 2023: 221-222 - [c7]Shao-Chang Huang, Chien-Wei Wang, Chih-Hsuan Lin, Kai-Chieh Hsu, Ching-Ho Li, Chih-Cherng Liao, Jung-Tsun Chuang, Gong-Kai Lin, Lin-Fan Chen, Chun-Chih Chen, Yeh-Ning Jou, Jian-Hsing Lee, Ke-Horng Chen:
Transmission Line Pulse Width Impacting on Device Performances. ICCE-Taiwan 2023: 227-228 - 2022
- [c6]Shao-Chang Huang, Jian-Hsing Lee, Chun-Chih Chen, Ching-Ho Li, Chih-Cherng Liao, Kai-Chieh Hsu, Gong-Kai Lin, Li-Fan Chen, Chien-Wei Wang, Chih-Hsuan Lin, Yeh-Ning Jou, Ke-Horng Chen:
Gate Voltages Impacting on Latch-up Measurements. ICCE-TW 2022: 75-76 - [c5]Jian-Hsing Lee, Yeh-Jen Huang, Li-Yang Hong, Li-Fan Chen, Yeh-Ning Jou, Shin-Cheng Lin, Walter Wohlmuth, Chih-Cherng Liao, Ching-Ho Li, Shoa-Chang Huang, Ke-Horng Chen:
Incorporation of a Simple ESD Circuit in a 650V E-Mode GaN HEMT for All-Terminal ESD Protection. IRPS 2022: 2
2010 – 2019
- 2019
- [c4]Shao-Chang Huang, Chih-Cherng Liao, Hsien-Feng Liao, Shou-Peng Weng, Karuna Nidhi, Yu-Kai Wang, Yi-Jen Chen, Hwa-Chyi Chiou, Yeh-Ning Jou, Jian-Hsing Lee:
Analyzing Gate-Driven Circuit Parameters for Adding ESD Performances. ICCE-TW 2019: 1-2 - 2015
- [c3]Seian-Feng Liao, Kai-Neng Tang, Ming-Dou Ker, Jia-Rong Yeh, Hwa-Chyi Chiou, Yeh-Jen Huang, Chun-Chien Tsai, Yeh-Ning Jou, Geeng-Lih Lin:
Impact of guard ring layout on the stacked low-voltage PMOS for high-voltage ESD protection. ECCTD 2015: 1-4
2000 – 2009
- 2009
- [c2]Wen-Yi Chen, Ming-Dou Ker, Yeh-Ning Jou, Yeh-Jen Huang, Geeng-Lih Lin:
Improvement on ESD Robustness of Lateral DMOS in High-voltage CMOS ICs by Body Current Injection. ISCAS 2009: 385-388 - 2008
- [c1]Wen-Yi Chen, Ming-Dou Ker, Yeh-Jen Huang, Yeh-Ning Jou, Geeng-Lih Lin:
Measurement on snapback holding voltage of high-voltage LDMOS for latch-up consideration. APCCAS 2008: 61-64
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