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Joaquín Alvarado
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2010 – 2019
- 2013
- [j6]Muthupandian Cheralathan
, Esteban Contreras, Joaquín Alvarado
, Antonio Cerdeira, Giuseppe Iannaccone
, Enrico Sangiorgi, Benjamín Iñíguez:
Implementation of nanoscale double-gate CMOS circuits using compact advanced transport models. Microelectron. J. 44(2): 80-85 (2013) - 2012
- [j5]Valeria Kilchytska
, Joaquín Alvarado
, S. Put, Nadine Collaert, Eddy Simoen, Cor Claeys, Otilia Militaru, Guy Berger, Denis Flandre
:
High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETs. Microelectron. Reliab. 52(1): 118-123 (2012) - 2011
- [j4]C. Roda Neve, Valeria Kilchytska
, Joaquín Alvarado
, Dimitri Lederer, O. Militaru, Denis Flandre
, Jean-Pierre Raskin:
Impact of neutron irradiation on the RF properties of oxidized high-resistivity silicon substrates with and without a trap-rich passivation layer. Microelectron. Reliab. 51(2): 326-331 (2011) - [j3]Joaquín Alvarado
, Valeria Kilchytska
, El Hafed Boufouss, Denis Flandre
:
Characterization and modelling of single event transients in LDMOS-SOI FETs. Microelectron. Reliab. 51(9-11): 2004-2009 (2011) - 2010
- [j2]Joaquín Alvarado
, El Hafed Boufouss, Valeria Kilchytska
, Denis Flandre
:
Compact model for single event transients and total dose effects at high temperatures for partially depleted SOI MOSFETs. Microelectron. Reliab. 50(9-11): 1852-1856 (2010)
2000 – 2009
- 2007
- [j1]Joaquín Alvarado
, Antonio Cerdeira, Valeria Kilchytska
, Denis Flandre
:
Harmonic distortion analysis using an improved charge sheet model for PD SOI MOSFETs. Microelectron. J. 38(3): 321-326 (2007)
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