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ORCIDMicroelectronics Reliability, Volume 52
Volume 52, Number 1, January 2012
- Peter Ersland, Roberto Menozzi
:
Editorial. 1
- Charles S. Whitman:
Impact of ambient temperature set point deviation on Arrhenius estimates. 2-8 - Michael Ferrara, Michael Stephens, Leslie Marchut, Chris Yang, Ventony Fryar, Preston Scott:
Analysis of in situ monitored thermal cycling benefits for wireless packaging early reliability evaluation. 9-15 - William J. Roesch, Dorothy June M. Hamada, David Littleton:
Introducing a scale structure to correlate quality and reliability. 16-22 - E. A. Douglas, C. Y. Chang, B. P. Gila, M. R. Holzworth, Kevin S. Jones, Lu Liu, Jinhyung Kim, Soohwan Jang, Glen David Via, Fan Ren, Stephen J. Pearton:
Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors. 23-28 - Milan Tapajna, Nicole Killat, Uttiya Chowdhury, Jose L. Jimenez, Martin Kuball:
The role of surface barrier oxidation on AlGaN/GaN HEMTs reliability. 29-32 - Jungwoo Joh, Jesús A. del Alamo:
Impact of gate placement on RF power degradation in GaN high electron mobility transistors. 33-38
- Tibor Grasser:
Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities. 39-70 - Ugo Lafont, Henk W. van Zeijl, Sybrand van der Zwaag:
Increasing the reliability of solid state lighting systems via self-healing approaches: A review. 71-89 - Dhafer Abdulameer Shnawah, Mohd Faizul Mohd Sabri, Irfan Anjum Badruddin:
A review on thermal cycling and drop impact reliability of SAC solder joint in portable electronic products. 90-99 - Jia-Liang Le:
A finite weakest-link model of lifetime distribution of high-k gate dielectrics under unipolar AC voltage stress. 100-106 - Robert Mroczynski, Romuald B. Beck:
Reliability issues of double gate dielectric stacks based on hafnium dioxide (HfO2) layers for non-volatile semiconductor memory (NVSM) applications. 107-111 - P. S. Das, Abhijit Biswas:
Investigations on electrical characteristics and reliability properties of MOS capacitors using HfAlOx on n-GaAs substrates. 112-117 - Valeria Kilchytska, Joaquín Alvarado, S. Put, Nadine Collaert, Eddy Simoen, Cor Claeys, Otilia Militaru, Guy Berger, Denis Flandre:
High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETs. 118-123 - Antoine D. Touboul, L. Foro, Frederic Wrobel, Frédéric Saigné:
On the reliability assessment of trench fieldstop IGBT under atmospheric neutron spectrum. 124-129 - Bingxu Ning, Zhengxuan Zhang, Zhangli Liu, Zhiyuan Hu, Ming Chen, Dawei Bi, Shichang Zou:
Radiation-induced shallow trench isolation leakage in 180-nm flash memory technology. 130-136 - Jaehyun Cho, Sungwook Jung, Kyungsoo Jang, Hyungsik Park, Jongkyu Heo, Wonbaek Lee, DaeYoung Gong, Seungman Park, Hyungwook Choi, Hanwook Jung, Byoungdeog Choi, Junsin Yi:
The effect of gate overlap lightly doped drains on low temperature poly-Si thin film transistors. 137-140 - Etienne Herth, H. Desré, Emmanuelle Algré, Christiane Legrand, Tuami Lasri:
Investigation of optical and chemical bond properties of hydrogenated amorphous silicon nitride for optoelectronics applications. 141-146 - Chao-Hung Chen, Hsien-Chin Chiu, Chih-Wei Yang, Jeffrey S. Fu, Feng-Tso Chien:
Novel GaAs enhancement-mode/depletion-mode pHEMTs technology using high-k praseodymium oxide interlayer. 147-150 - Priyanka Malik, R. S. Gupta, Rishu Chaujar, Mridula Gupta:
AC analysis of nanoscale GME-TRC MOSFET for microwave and RF applications. 151-158 - Yong Jiang, Li-Lung Lai, Jian-Jun Zhou:
Single-bit failure analysis at a nanometer resolution by conductive atomic force microscopy. 159-164 - Toni T. Mattila, Jue Li, Jorma K. Kivilahti:
On the effects of temperature on the drop reliability of electronic component boards. 165-179 - Jenn-Ming Song, Yao-Ren Liu, Yi-Shao Lai, Ying-Ta Chiu, Ning-Cheng Lee:
Influence of trace alloying elements on the ball impact test reliability of SnAgCu solder joints. 180-189 - Juha Karppinen, Jue Li, J. Pakarinen, Toni T. Mattila, Mervi Paulasto-Kröckel:
Shock impact reliability characterization of a handheld product in accelerated tests and use environment. 190-198 - Takeshi Ito, Isamu Taguchi, Masayasu Soga, Masahiko Mitsuhashi, Toshiro Shinohara, Toshinori Ogashiwa, Takashi Nishimori, Nobuyuki Akiyama:
Thermal stability of back side metallization multilayer for power device application. 199-205 - Mingzhi Ni, Ming Li, Dali Mao:
Adhesion improvement of Epoxy Molding Compound - Pd Preplated leadframe interface using shaped nickel layers. 206-211 - Sébastien Jacques, A. Caldeira, N. Batut, A. Schellmanns, R. Leroy, L. Gonthier:
Lifetime prediction modeling of non-insulated TO-220AB packages with lead-based solder joints during power cycling. 212-216 - Chang-Kyu Chung, Jae-Han Kim, Jong-Won Lee, Kyoung-Won Seo, Kyung-Wook Paik:
Enhancement of electrical stability of anisotropic conductive film (ACF) interconnections with viscosity-controlled and high Tg ACFs in fine-pitch chip-on-glass applications. 217-224 - Kyoung-Lim Suk, Ho-Young Son, Chang-Kyu Chung, Joong Do Kim, Jin-Woo Lee, Kyung-Wook Paik:
Flexible Chip-on-Flex (COF) and embedded Chip-in-Flex (CIF) packages by applying wafer level package (WLP) technology using anisotropic conductive films (ACFs). 225-234 - Olivér Krammer, László Milán Molnár, László Jakab, András Szabó:
Modelling the effect of uneven PWB surface on stencil bending during stencil printing process. 235-240 - C. Y. Khor, Mohd Zulkifly Abdullah, H. J. Tony Tan, W. C. Leong, D. Ramdan:
Investigation of the fluid/structure interaction phenomenon in IC packaging. 241-252 - Owen Thomas, Chris Hunt, Martin Wickham:
Finite difference modelling of moisture diffusion in printed circuit boards with ground planes. 253-261 - W. L. Lu, Y. M. Hwang:
Analysis of a vibration-induced micro-generator with a helical micro-spring and induction coil. 262-270 - R. Ardito, Attilio Frangi, Alberto Corigliano, Biagio De Masi, G. Cazzaniga:
The effect of nano-scale interaction forces on the premature pull-in of real-life Micro-Electro-Mechanical Systems. 271-281 - Franco Fiori:
On the use of high-impedance power supplies to reduce the substrate switching noise in system-on-chips. 282-288 - Marta Bagatin, Simone Gerardin, Alessandro Paccagnella, Carla Andreani, Giuseppe Gorini, C. D. Frost:
Temperature dependence of neutron-induced soft errors in SRAMs. 289-293 - Pawel Salek, Lidia Lukasiak, Andrzej Jakubowski:
New threshold voltage definition for undoped symmetrical DG MOSFET. 294-295 - S. Tarasovs, Janis Andersons:
Competition between the buckling-driven delamination and wrinkling in compressed thin coatings. 296-299 - Vojkan Davidovic:
Reliability Physics and Engineering: Time-to-Failure Modeling, J.W. McPherson. Springer (2010). 318 pp., ISBN: 978-1-4419-6347-5. 300
Volume 52, Number 2, February 2012
- Tadatomo Suga, Jenn-Ming Song, Yi-Shao Lai:
Guest Editorial - Low Temperature Processing for Microelectronics and Microsystems Packaging. 301 - Cheng-Ta Ko, Kuan-Neng Chen:
Low temperature bonding technology for 3D integration. 302-311 - Ya-Sheng Tang, Yao-Jen Chang, Kuan-Neng Chen:
Wafer-level Cu-Cu bonding technology. 312-320 - Chuan Seng Tan, Dau Fatt Lim, Xiao Fang Ang, J. Wei, K. C. Leong:
Low temperature Cu-Cu thermo-compression bonding with temporary passivation of self-assembled monolayer and its bond strength enhancement. 321-324 - Ki Yeol Byun, Cindy Colinge:
Overview of low temperature hydrophilic Ge to Si direct bonding for heterogeneous integration. 325-330 - H. Moriceau, F. Rieutord, F. Fournel, Léa Di Cioccio, C. Moulet, Luc Libralesso, Pierric Gueguen, Rachid Taibi, C. Deguet:
Low temperature direct bonding: An attractive technique for heterostructures build-up. 331-341 - Ryuichi Kondou, Chenxi Wang, Akitsu Shigetou, Tadatomo Suga:
Nanoadhesion layer for enhanced Si-Si and Si-SiN wafer bonding. 342-346 - Chenxi Wang, Tadatomo Suga:
Investigation of fluorine containing plasma activation for room-temperature bonding of Si-based materials. 347-351 - S. L. Lin, W. C. Huang, C. T. Ko, Kuan-Neng Chen:
BCB-to-oxide bonding technology for 3D integration. 352-355 - Hermann Oppermann, Lothar Dietrich:
Nanoporous gold bumps for low temperature bonding. 356-360 - Matiar M. R. Howlader, Thomas E. Doyle:
Low temperature nanointegration for emerging biomedical applications. 361-374 - K. Suganuma, S. Sakamoto, N. Kagami, D. Wakuda, K. S. Kim, M. Nogi:
Low-temperature low-pressure die attach with hybrid silver particle paste. 375-380 - Y. J. Chen, C. C. Chang, H. Y. Lin, S. C. Hsu, C. Y. Liu:
Fabrication of vertical thin-GaN light-emitting diode by low-temperature Cu/Sn/Ag wafer bonding. 381-384 - Chi-Pu Lin, Chih-Ming Chen:
Solid-state interfacial reactions at the solder joints employing Au/Pd/Ni and Au/Ni as the surface finish metallizations. 385-390 - Yu-Feng Liu, Weng-Sing Hwang, Yen-Fang Pai, Ming-Hsu Tsai:
Low temperature fabricated conductive lines on flexible substrate by inkjet printing. 391-397 - Yih-Ming Liu, Nen-Wen Pu, Wen-Ding Chen, Kun-Hong Lin, Yuh Sung, Ming-Der Ger, Ching-Liang Chang, Te-Liand Tseng:
Low temperature fabrication of Ni-P metallic patterns on ITO substrates utilizing inkjet printing. 398-404 - Aminul Islam, Mohd. Hasan:
A technique to mitigate impact of process, voltage and temperature variations on design metrics of SRAM Cell. 405-411 - W. Heo, Nae-Eung Lee:
Effect of additive N2 and Ar gases on surface smoothening and fracture strength of Si wafers during high-speed chemical dry thinning. 412-417 - R. K. Mamedov, M. A. Yeganeh:
Current transport and formation of energy structures in narrow Au/n-GaAs Schottky diodes. 418-424 - Feng-Renn Juang, Yean-Kuen Fang, Hung-Yu Chiu:
Dependence of the Au/SnOx/n-LTPS/glass thin film MOS Schottky diode CO gas sensing performances on operating temperature. 425-429 - Ákos Nemcsics, Andrea Stemmann, Jeno Takács:
To the understanding of the formation of the III-V based droplet epitxial nanorings. 430-433 - Zhihua Dong, Jinyan Wang, Cheng P. Wen, Shenghou Liu, Rumin Gong, Min Yu, Yilong Hao, Fujun Xu, Bo Shen, Yangyuan Wang:
High temperature induced failure in Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructure. 434-438 - Sachin Kumar, Nikhil M. Vichare, Eli Dolev, Michael G. Pecht:
A health indicator method for degradation detection of electronic products. 439-445 - Feifei He, Cher Ming Tan:
Electromigration reliability of interconnections in RF low noise amplifier circuit. 446-454 - J. W. Jang, L. Li, P. Bowles, R. Bonda, D. R. Frear:
High-lead flip chip bump cracking on the thin organic substrate in a module package. 455-460
Volume 52, Number 3, March 2012
- Vitezslav Benda:
Progress in power semiconductor devices. 461-462
- Patrik Pribytny, Daniel Donoval, Ales Chvála, Juraj Marek, Marian Molnar:
Electro-thermal analysis and optimization of edge termination of power diode supported by 2D numerical modeling and simulation. 463-468 - Jirí Hájek, Václav Papez, B. Kojecký:
Investigation of flicker noise in silicon diodes under reverse bias. 469-474 - Josef Lutz, Roman Baburske:
Dynamic avalanche in bipolar power devices. 475-481 - Nishad Patil, Diganta Das, Michael G. Pecht:
A prognostic approach for non-punch through and field stop IGBTs. 482-488 - Emmanuel Marcault, Marie Breil, A. Bourennane, Patrick Tounsi, Jean-Marie Dorkel:
Study of mechanical stress impact on the I-V characteristics of a power VDMOS device using 2D FEM simulations. 489-496 - B. T. Donnellan, G. J. Roberts, P. A. Mawby, A. T. Bryant:
Modelling of current sharing in paralleled current limiting superjunction MOSFETs with common gate drives. 497-502 - Ignasi Cortés, Gaëtan Toulon, Frederic Morancho, E. Hugonnard-Bruyere, B. Villard, W. J. Toren:
Analysis and optimization of lateral thin-film Silicon-on-insulator (SOI) MOSFET transistors. 503-508 - Ralf Siemieniec, Gerhard Nöbauer, Daniel Domes:
Stability and performance analysis of a SiC-based cascode switch and an alternative solution. 509-518
- Renan Trevisoli Doria, João Antonio Martino, Eddy Simoen, Cor Claeys, Marcelo Antonio Pavanello:
An analytic method to compute the stress dependence on the dimensions and its influence in the characteristics of triple gate devices. 519-524 - Pavel Poliakov, Pieter Blomme, Alessandro Vaglio Pret, Miguel Corbalan Miranda, Roel Gronheid, Diederik Verkest, Jan Van Houdt, Wim Dehaene:
Trades-off between lithography line edge roughness and error-correcting codes requirements for NAND Flash memories. 525-529 - Arief Suriadi Budiman, H.-A.-S. Shin, B.-J. Kim, S.-H. Hwang, Ho-Young Son, Min-Suk Suh, Q.-H. Chung, K.-Y. Byun, Nobumichi Tamura, Martin Kunz, Young-Chang Joo:
Measurement of stresses in Cu and Si around through-silicon via by synchrotron X-ray microdiffraction for 3-dimensional integrated circuits. 530-533 - E. J. Cheng, Yu-Lin Shen:
Thermal expansion behavior of through-silicon-via structures in three-dimensional microelectronic packaging. 534-540 - Dao-Long Chen, Ping-Feng Yang, Yi-Shao Lai:
A review of three-dimensional viscoelastic models with an application to viscoelasticity characterization using nanoindentation. 541-558 - Liang Zhang, Cheng-wen He, Yong-huan Guo, Ji-guang Han, Yong-wei Zhang, Xu-yan Wang:
Development of SnAg-based lead free solders in electronics packaging. 559-578 - Fangjie Cheng, Feng Gao, Yan Wang, Yunlong Wu, Zhaolong Ma, Junxiang Yang:
Sn addition on the tensile properties of high temperature Zn-4Al-3Mg solder alloys. 579-584 - Tingbi Luo, Anmin Hu, Jing Hu, Ming Li, Dali Mao:
Microstructure and mechanical properties of Sn-Zn-Bi-Cr lead-free solder. 585-588 - Daquan Yu:
Development of reliable low temperature wafer level hermetic bonding using composite seal joint. 589-594 - Jiwon Kim, Byung-seung Yim, Jongmin Kim, Jooheon Kim:
The effects of functionalized graphene nanosheets on the thermal and mechanical properties of epoxy composites for anisotropic conductive adhesives (ACAs). 595-602 - Janusz M. Smulko, Kazimierz Józwiak, Marek Olesz:
Quality testing methods of foil-based capacitors. 603-609
Volume 52, Number 4, April 2012
- Hei Wong:
Advances in non-volatile memory technology. 611-612
- Takayuki Kawahara, Kenchi Ito, Riichiro Takemura, Hideo Ohno:
Spin-transfer torque RAM technology: Review and prospect. 613-627 - Alexander Makarov, Viktor Sverdlov, Siegfried Selberherr:
Emerging memory technologies: Trends, challenges, and modeling methods. 628-634 - Jer-Chyi Wang, Chih-Ting Lin, Pai-Chi Chou, Chao-Sung Lai:
Gadolinium-based metal oxide for nonvolatile memory applications. 635-641 - Elena Atanassova, Albena Paskaleva, D. Spassov:
Doped Ta2O5 and mixed HfO2-Ta2O5 films for dynamic memories applications at the nanoscale. 642-650 - HongYu Yu, Yuan Sun, Navab Singh, Guo-Qiang Lo, Dim-Lee Kwong:
Perspective of flash memory realized on vertical Si nanowires. 651-661 - Jong-Ho Lee, Sang-Goo Jung:
NAND flash memory technology utilizing fringing electric field. 662-669 - Oi-Ying Wong, Hei Wong, Wing-Shan Tam, Ted Chi-Wah Kok:
A comparative study of charge pumping circuits for flash memory applications. 670-687 - Chunmeng Dou, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai:
Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer. 688-691
- Shengdong Hu, Jun Luo, Kaizhou Tan, Ling Zhang, Zhaoji Li, Bo Zhang, Jianlin Zhou, Ping Gan, Guolin Qin, Zhengyuan Zhang:
Realizing high breakdown voltage for a novel interface charges islands structure based on partial-SOI substrate. 692-697 - Chien-Ping Wang, Tzung-Te Chen, Han-Kuei Fu, Tien-Li Chang, Pei-Ting Chou, Mu-Tao Chu:
Analysis of thermal characteristics and mechanism of degradation of flip-chip high power LEDs. 698-703 - Wenjian Yu, Qingqing Zhang, Zuochang Ye, Zuying Luo:
Efficient statistical capacitance extraction of nanometer interconnects considering the on-chip line edge roughness. 704-710 - R. F. Szeloch, Pawel Janus, Jaroslaw Serafinczuk, P. M. Szecówka, Grzegorz Józwiak:
Characterization of fatigued Al lines by means of SThM and XRD: Analysis using fast Fourier transform. 711-717 - Se Young Yang, Woon-Seong Kwon, Soon-Bok Lee:
Chip warpage model for reliability prediction of delamination failures. 718-724 - Chien-Pan Liu, Yen-Fu Liu, Chang-Hung Li, Hung-Chieh Cheng, Yi-Chun Kung, Jeng-Yu Lin:
A novel decapsulation technique for failure analysis of epoxy molded IC packages with Cu wire bonds. 725-734 - Yusuf Cinar, Jinwoo Jang, Gunhee Jang, Seonsik Kim, Jaeseok Jang, Jinkyu Chang, Yonghyun Jun:
Failure mechanism of FBGA solder joints in memory module subjected to harmonic excitation. 735-743 - W. C. Leong, Mohd Zulkifly Abdullah, C. Y. Khor:
Application of flexible printed circuit board (FPCB) in personal computer motherboards: Focusing on mechanical performance. 744-756 - Yongguang Xiao, Minghua Tang, Jiancheng Li, Bo Jiang, John He:
The influence of ferroelectric-electrode interface layer on the electrical characteristics of negative-capacitance ferroelectric double-gate field-effect transistors. 757-760
Volume 52, Number 5, May 2012
- Cheng-Yi Liu, S. W. Ricky Lee, Moo Whan Shin, Yi-Shao Lai:
Reliability of high-power LED packaging and assembly. 761
- Moon-Hwan Chang, Diganta Das, Prabhakar V. Varde, Michael G. Pecht:
Light emitting diodes reliability review. 762-782 - S. Tarashioon, Alessandro Baiano, Henk W. van Zeijl, C. Guo, S. W. Koh, W. D. van Driel, G. Q. Zhang:
An approach to "Design for Reliability" in solid state lighting systems at high temperatures. 783-793 - Yen-Fu Su, Shin-Yueh Yang, Tuan-Yu Hung, Chang-Chun Lee, Kuo-Ning Chiang:
Light degradation test and design of thermal performance for high-power light-emitting diodes. 794-803 - Matteo Meneghini, Matteo Dal Lago, Nicola Trivellin, Giovanna Mura, Massimo Vanzi, Gaudenzio Meneghesso, Enrico Zanoni:
Chip and package-related degradation of high power white LEDs. 804-812 - Jau-Sheng Wang, Chun-Chin Tsai, Jyun-Sian Liou, Wei-Chih Cheng, Shun-Yuan Huang, Gi-Hung Chang, Wood-Hi Cheng:
Mean-time-to-failure evaluations of encapsulation materials for LED package in accelerated thermal tests. 813-817 - Ray-Hua Horng, Re-Ching Lin, Yi-Chen Chiang, Bing-Han Chuang, Hung-Lieh Hu, Chen-Peng Hsu:
Failure modes and effects analysis for high-power GaN-based light-emitting diodes package technology. 818-821 - C. H. Chen, Ming-Yi Tsai:
Strength determination of high-power LED die using point-load and line-load tests. 822-829 - Jong Hwa Choi, Moo Whan Shin:
Thermal investigation of LED lighting module. 830-835 - Minseok Ha, Samuel Graham:
Development of a thermal resistance model for chip-on-board packaging of high power LED arrays. 836-844